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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2053
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
The 2SK2053 is an N-channel vertical MOS FET. Because it can be driven by a voltage as low as 1.5 V and it is not necessary to consider a drive current, this FET is ideal as an actuator for low-current portable systems such as headphone stereos and video cameras.
PACKAGE DIMENSIONS (in mm)
5.7 0.1 2.0 0.2 1.5 0.1
3.65 0.1
FEATURES
* New package intermediate between small signal and power types * Gate can be driven by 1.5 V * Low ON resistance RDS(on) = 0.40 MAX. @ VGS = 1.5 V, ID = 1.0 A RDS(on) = 0.12 MAX. @ VGS = 4.0 V, ID = 2.5 A EQUIVALENT CURCUIT
Drain (D)
1.0
S 0.5 0.1
D 0.85 0.1
G
0.5 0.1
5.4 0.25
0.55
0.4 0.05 Marking: NA1
2.1 4.2
PIN CONNECTIONS
Gate (G) Gate protection diode Source (S) Internal S: Source D: Drain diode G: Gate
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
PARAMETER Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) Total Power Dissipation Channel Temperature Operating Temperature Storage Temperature SYMBOL VDSS VGSS ID(DC) ID(pulse) PT Tch Topt Tstg PW 10 ms, duty cycle 50 % 7.5 cm2 x 0.7 mm ceramic substrate used VGS = 0 VDS = 0 TEST CONDITIONS RATING 16 7.0 5.0 10.0 2.0 150 -20 to +60 -55 to +150 UNIT V V A A W C C C
Document No. D11224EJ2V0DS00 (2nd edition) Date Published June 1996 P Printed in Japan
(c)
1996
2SK2053
ELECTRICAL CHARACTERISTICS (TA = 25 C)
PARAMETER Drain Cut-Off Current Gate Leakage Current Gate Cut-Off Voltage Forward Transfer Admittance Drain to Source On-State Resistance Drain to Source On-State Resistance Drain to Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time SYMBOL IDSS IGSS VGS(off) |yfs| RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf VDD = 3 V, ID = 2.5 A, VGS(on) = 3 V, RG = 10 , RL = 1.2 TEST CONDITIONS VDS = 16 V, VGS = 0 VGS = 7.0 V, VDS = 0 VDS = 3 V, ID = 1 mA VDS = 3 V, ID = 2.5 A VGS = 1.5 V, ID = 0.5 A VGS = 2.5 V, ID = 2.5 A VGS = 4.0 V, ID = 2.5 A VDS = 3 V, VGS = 0, f = 1.0 MHz 0.5 4 0.19 0.08 0.06 730 640 230 85 450 280 310 0.40 0.15 0.12 0.8 MIN. TYP. MAX. 1.0 3.0 1.1 UNIT
A A
V S pF pF pF ns ns ns ns
2
2SK2053
TYPICAL CHARACTERISTICS (TA = 25 C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 10
m 1 = PW ms
10
FORWARD BIAS SAFE OPERATING AREA
dT - Derating Factor - %
80
ID - Drain Current - A
5
10 0
s
m
2 1 0.5
DC
s
60
40
20 0.2 0.1 0 30 60 90 120 TA - Ambient Temperature - C 150 1 Single pulse 2 5 10 20 50 VDS - Drain to Source Voltage - V 100
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE
V 3.0 V 2.5 V
TRANSFER CHARACTERISTICS 10 VDS = 3 V
5
4
ID - Drain Current - A ID - Drain Current - A
4.0
2.0
V
1.8 V
1
3
0.1
TA = 75 C 25 C -25C
2
VGS = 1.5 V
0.01 1
0
0.2 0.4 0.6 0.8 VDS - Drain to Source Voltage - V
1.0
0.001
0
0.5 1 1.5 2 VGS - Gate to Source Voltage - V
2.5
RDS(on) - Drain to Source On-State Resistance -
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 10
|yfs| - Forward Transfer Admittance - S VDS = 3 V
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT
0.7 0.6 0.5 0.4 0.3 0.2 0.1
VGS = 1.5 V
3 1 TA = -25 C 25 C 75 C 0.3 0.1
TA = 75 C
0.03 0.01 0.001 0.003
25 C 0.03
-25 C 0.1 0.3 1 ID - Drain Current - A 3 10
0.01 0.03 0.1 ID - Drain Current - A
0.3
1
0 0.01
3
2SK2053
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.01 VGS = 2.5 V DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.01 TA = 75 C 25 C -25 C VGS = 4.0 V
RDS(on) - Drain to Source On-State Resistance -
TA = 75 C 25 C -25 C
0.03
0.1 0.3 1 ID - Drain Current - A
3
10
RDS(on) - Drain to Source On-State Resistance -
0.03
0.1 0.3 1 ID - Drain Current - A
3
10
RDS(on) - Drain to Source On-State Resistance -
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 0.5 ISD - Diode Forward Current - A 10
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
0.4 ID = 1 A, 2.5 A 0.3 5A
1
0.1
0.2
0.01
0.1
0
2 4 VGS - Gate to Source Voltage - V
6
0.001 0.2
0.4 0.6 0.8 1.0 VSD - Source to Drain Voltage - V
1.2
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 1 000 Ciss, Crss, Coss - Capacitance - pF 500 Ciss Coss 200 100 50 Crss td(on), tr, td(off), tf - Switching Time - ns 1 000 500
SWITCHING CHARACTERISTICS
tr tf td(off)
200 100 50 td(on)
20 10
20 10 0.1
VGS = 0 f = 1 MHz 1 2 5 10 20 50 VDS - Drain to Source Voltage - V 100
VDD = 3 V VGS(on) = 3 V 0.2 0.5 1 2 ID - Drain Current - A 5 10
4
2SK2053
REFERENCE
Document Name NEC semiconductor device reliability/quality control system Quality grade on NEC semiconductor devices Semiconductor device mounting technology manual Guide to quality assurance for semiconductor devices Semiconductor selection guide Document No. TEI-1202 IEI-1209 C10535E MEI-1202 X10679E
5
2SK2053
[MEMO]
No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product.
M4 94.11

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